schottky barrier diode rb551v-30 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) high frequency rectification ? features 1) small mold type. (umd2) 2) low v f . 3) high reliability. ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io ma i fsm a tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v f 1 - - 0.36 v i f =100ma v f 2 - - 0.47 v i f =500ma i r - - 100 a v r =20v parameter forward voltage reverse current storage temperature ? 40 to ? 125 forward current surge peak (60hz ? 1cyc) 2 junction temperature 125 reverse voltage (dc) 20 average rectified forward current 500 parameter limits reverse voltage (repetitive peak) 30 umd2 2.1 0.8min . 0.9min. 4.00.1 2.00.05 1.550.05 1.400.1 4.00.1 1.05 2.75 3.50.05 1.750.1 8.00.2 0.30.1 1.00.1 2.80.1 rohm : umd2 jeita : sc-90/a jedec : s0d-323 dot (year week factory) 0.30.05 0.70.2 0.1 0.10.1 0.05 1.70.1 2.50.2 1.250.1 1/3 2011.05 - rev.c data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb551v-30 0 20 40 60 80 100 120 140 160 180 200 ta=25 vr=20v n=30pcs ave:42.7ua 1 10 100 1000 0.001 0.1 10 1000 rth(j-a) rth(j-c) 1ms im=1ma if=10ma 300us time mounted on epoxy board 1 10 100 1 10 100 8.3ms ifsm 1cyc 8.3ms forward voltage vf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(ua) reverse voltage vr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersipn map capacitance between terminals:ct(pf) ct dispersion map ifsm dispersion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth ( /w) forward power dissipation:pf(w) average rectified forward current io(a) io-pf characteristics reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics 0.1 1 10 100 1000 0 100 200 300 400 500 600 1 10 100 0102030 f=1mhz 400 410 420 430 440 450 ave:420.4mv ta=25 if=500ma n=30pcs 40 50 60 70 80 ave:59.5pf ta=25 f=1mhz vr=0v n=10pcs 0 5 10 15 20 ave:8.60a 8.3ms ifsm 1cyc 1 10 100 0.1 1 10 100 t ifsm 0 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 0.1 1 10 100 1000 10000 100000 0 102030 ta=125 ta=-25 ta=25 ta=75 ta=-25 ta=125 ta=75 ta=25 dc d=1/2 sin( 180) dc d=1/2 sin( 180) 2/3 2011.05 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb551v-30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 25 50 75 100 125 ambient temperature:ta( ) derating curve ? (io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ) derating curve ? (io-tc) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 255075100125 dc sin(?180) d=1/2 sin( 180) dc d=1/2 t tj=125 d=t/t t vr io vr=15v 0a 0v t tj=125 d=t/t t vr io vr=15v 0a 0v 3/3 2011.05 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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